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PD - 96286B
AUIRF7665S2TR
AUTOMOTIVE GRADE
AUIRF7665S2TR1
3.5 ?
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?
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Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8W with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
DirectFET ? Power MOSFET ?
V (BR)DSS 100V
R DS(on) typ. 51m ?
max. 62m ?
R G (typical)
Q g (typical) 8.3nC
Applicable DirectFET Outline and Substrate Outline ?
SB
DirectFET ? ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7665S2 combines the latest Automotive HEXFET? Power MOSFET Silicon technology with the advanced DirectFET packaging
platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T C = 100°C
I D @ T A = 25°C
I D @ T C = 25°C
I DM
P D @T C = 25°C
P D @T A = 25°C
E AS
E AS(tested)
I AR
E AR
T P
T J
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
100
± 20
14.4
10.2
4.1
77
58
30
2.4
37
56
See Fig. 18a,18b,16,17
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
T STG Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Ambient
Junction-to-Ambient
–––
12.5
63
–––
R θ JA
R θ J-Can
R θ J-PCB
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
20
–––
1.4
0.2
–––
5.0
–––
°C/W
W/°C
HEXFET ? is a registered trademark of International Rectifier.
www.irf.com
1
09/03/10
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